Pattern forming method, method of manufacturing magnetic recording medium and magnetic recording medium

摘要

A patterning method includes steps of forming a first copolymer layer comprising a first diblock copolymer which has portions which are phase incompatible. The first copolymer layer is annealed to form a first phase pattern including a first phase dispersed in a second surrounding phase. The first copolymer is then etched forming a first topographic pattern that corresponds to the first phase pattern. A second copolymer layer of a second diblock copolymer is then formed over the first topographic pattern, and then annealed to generate a second phase pattern offset from the first topographic pattern. Etching is used to form a second topographic pattern corresponding to the second phase pattern. The first and second topographic patterns are then transferred to the substrate. The patterning method can be used, for example, to form patterned recording layers for magnetic storage devices.

主权项

1. A patterning method, comprising:
forming a first copolymer layer on a substrate having a processing layer, the first copolymer layer comprising a first diblock copolymer including two polymeric portions which are phase incompatible with each other; annealing the first copolymer layer to thereby generate a first phase pattern in the first copolymer layer, the first phase pattern including a first dispersed phase and a first continuous phase that surrounds the first dispersed phase; etching the first copolymer layer to form a first topographic pattern corresponding to the first phase pattern; forming a second copolymer layer over the first topographic pattern, the second copolymer layer comprising a second diblock copolymer including two polymeric portions which are phase incompatible with each other; annealing the second copolymer layer to thereby generate a second phase pattern in the second copolymer layer, the second phase pattern offset from the first topographic pattern in a direction parallel to the substrate and including a second dispersed phase and a second continuous phase that surrounds the second dispersed phase; etching the second copolymer layer to form a second topographic pattern corresponding to the second phase pattern; and transferring the first and second topographic patterns to the processing layer.