| 发明名称 | Thermoelectric material formed of Mg<sub>2</sub>Si-based compound and production method therefor | ||
| 摘要 | A thermoelectric material (and a method for producing the same) is essentially formed of an Mg2Si-based compound represented by the chemical formula Mg2-x-y-zAlxZnyMnzSi (x≠0, y≠0, z≠0, 0.04≦y/x≦0.6, and 0.013≦z/x≦0.075) wherein the total amount of Al, Zn, and Mn is 0.3 at % to 5 at %. Mg2-x-y-zAlxZnyMnz is provided in the form of an Mg alloy. | ||
| 申请公布号 | US9115420(B2) | 申请公布日期 | 2015.08.25 |
| 申请号 | US201113317848 | 申请日期 | 2011.10.31 |
| 申请人 | HITACHI CHEMICAL COMPANY, LTD.;NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY | 发明人 | Itoh Takashi;Hagio Kento |
| 分类号 | C22C23/00;C22C23/02;B22F3/14;C04B35/58;C04B35/626;C04B35/645;C22C1/04;C22C1/05 | 主分类号 | C22C23/00 |
| 代理机构 | McGinn IP Law Group, PLLC | 代理人 | McGinn IP Law Group, PLLC |
| 主权项 | 1. A thermoelectric material essentially formed of an Mg2Si-based compound represented by the chemical formula Mg2-x-y-zAlxZnyMnzSi (x≠0, y≠0, z≠0) wherein the total amount of Al, Zn, and Mn is 0.3 at % to 5 at %. | ||
| 地址 | Tokyo JP | ||