发明名称 |
Vitreous silica crucible and method of manufacturing the same |
摘要 |
Provided is a method of manufacturing a vitreous silica crucible for pulling a silicon single crystal which can suppress melt surface vibration of silicon melt filled therein and has a long lifetime. The crucible includes a peripheral wall portion, a curved portion and a bottom portion, and has a plurality of micro recesses on the specific region of the inner surface of the peripheral wall portion. |
申请公布号 |
US9115019(B2) |
申请公布日期 |
2015.08.25 |
申请号 |
US201013145094 |
申请日期 |
2010.12.14 |
申请人 |
SUMCO CORPORATION |
发明人 |
Sudo Toshiaki;Kishi Hiroshi;Suzuki Eriko |
分类号 |
C03B19/06;C03B19/09;C03C15/00;C03C23/00;C30B15/10;C30B29/06;C30B35/00;C03C17/23 |
主分类号 |
C03B19/06 |
代理机构 |
Law Office of Katsuhiro Arai |
代理人 |
Law Office of Katsuhiro Arai |
主权项 |
1. A method of manufacturing a vitreous silica crucible for pulling a silicon single crystal, the crucible comprising a peripheral wall portion, a curved portion and a bottom portion and having an outer layer of a natural fused silica layer and an inner layer of a synthetic fused silica layer, the method comprising the processes of:
forming an outer layer of natural silica powder; forming an inner layer of synthetic silica powder on an inner surface of the outer layer; forming a vitreous silica crucible having a peripheral wall portion, a curved portion and a bottom portion by fusing the layers from an inner surface side of the inner layer by arc discharge; forming a plurality of micro recesses in a specific region by use of physical processing using a carbon dioxide laser or diamond tool after the process of forming the vitreous silica crucible; and removing processing strain introduced in the process of forming the micro recesses by heat-treating the vitreous silica crucible at a temperature of 1200 to 1400 deg. C. for 5 minutes to one hour; wherein the thickness of the peripheral wall portion is in the range of 100 μm to 1000 μm; the specific region is located in a region of 0.60 H to 0.90 H from the bottom portion, where H is a height of the vitreous silica crucible; the specific region is divided into ring-shaped inner portions each having a width of 0.2 mm to 4.0 mm and the specific region has at least one micro recess in each of the ring-shaped inner portions; the average diameter of the micro recesses is in the range of 10 μm to 300 μm; the average depth of the micro recesses is in the range of 0.10% to 30% of the thickness of the crucible in the peripheral wall portion; and the ratio of the average diameter to the average depth, of the micro recesses, is less than 0.7. |
地址 |
Tokyo JP |