发明名称 Vitreous silica crucible and method of manufacturing the same
摘要 Provided is a method of manufacturing a vitreous silica crucible for pulling a silicon single crystal which can suppress melt surface vibration of silicon melt filled therein and has a long lifetime. The crucible includes a peripheral wall portion, a curved portion and a bottom portion, and has a plurality of micro recesses on the specific region of the inner surface of the peripheral wall portion.
申请公布号 US9115019(B2) 申请公布日期 2015.08.25
申请号 US201013145094 申请日期 2010.12.14
申请人 SUMCO CORPORATION 发明人 Sudo Toshiaki;Kishi Hiroshi;Suzuki Eriko
分类号 C03B19/06;C03B19/09;C03C15/00;C03C23/00;C30B15/10;C30B29/06;C30B35/00;C03C17/23 主分类号 C03B19/06
代理机构 Law Office of Katsuhiro Arai 代理人 Law Office of Katsuhiro Arai
主权项 1. A method of manufacturing a vitreous silica crucible for pulling a silicon single crystal, the crucible comprising a peripheral wall portion, a curved portion and a bottom portion and having an outer layer of a natural fused silica layer and an inner layer of a synthetic fused silica layer, the method comprising the processes of: forming an outer layer of natural silica powder; forming an inner layer of synthetic silica powder on an inner surface of the outer layer; forming a vitreous silica crucible having a peripheral wall portion, a curved portion and a bottom portion by fusing the layers from an inner surface side of the inner layer by arc discharge; forming a plurality of micro recesses in a specific region by use of physical processing using a carbon dioxide laser or diamond tool after the process of forming the vitreous silica crucible; and removing processing strain introduced in the process of forming the micro recesses by heat-treating the vitreous silica crucible at a temperature of 1200 to 1400 deg. C. for 5 minutes to one hour; wherein the thickness of the peripheral wall portion is in the range of 100 μm to 1000 μm; the specific region is located in a region of 0.60 H to 0.90 H from the bottom portion, where H is a height of the vitreous silica crucible; the specific region is divided into ring-shaped inner portions each having a width of 0.2 mm to 4.0 mm and the specific region has at least one micro recess in each of the ring-shaped inner portions; the average diameter of the micro recesses is in the range of 10 μm to 300 μm; the average depth of the micro recesses is in the range of 0.10% to 30% of the thickness of the crucible in the peripheral wall portion; and the ratio of the average diameter to the average depth, of the micro recesses, is less than 0.7.
地址 Tokyo JP