TRANSISTOR, SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A semiconductor device may include: conductive layers which have defined center region and side regions located on both sides of the center region, and include a first barrier pattern formed in the center region, a material pattern which is formed in the first barrier pattern and has etch selectivity with the first barrier pattern, and a second barrier pattern formed in the material pattern; and insulating layers which are alternately stacked with the conductive patterns.