Nonvolatile semiconductor memory device and method of manufacturing the same

摘要

According to one embodiment, a nonvolatile semiconductor memory device includes a memory cell and a select gate transistor formed on a semiconductor substrate. The memory cell includes a first gate insulating film, a first charge storage layer, a first intergate insulating film, and a first control gate. The first gate insulating film, the first charge storage layer, the first intergate insulating film, and the first control gate are formed on the semiconductor substrate in order. The select gate transistor includes a second gate insulating film, a first gate electrode, a second intergate insulating film, and a second control gate. The second gate insulating film, the first gate electrode, the second intergate insulating film, and the second control gate are formed on the semiconductor substrate in order. The second intergate insulating film different first and second thicknesses.

主权项

1. A nonvolatile semiconductor memory device comprising:
a memory cell formed on a semiconductor substrate, the memory cell comprising
a first gate insulating film formed on the semiconductor substrate,a first charge storage layer formed on the first gate insulating film,a first intergate insulating film formed on the first charge storage layer, anda first control gate formed on the first intergate insulating film; and a select gate transistor formed on the semiconductor substrate, the select gate transistor comprising
a second gate insulating film formed on the semiconductor substrate,a first gate electrode formed on the second gate insulating film,a second intergate insulating film formed on the first gate electrode and having different first and second thicknesses, anda second control gate formed on the second intergate insulating film.