Sense amplifier circuit and semiconductor memory device

摘要

To improve reading accuracy of a sense amplifier circuit and a semiconductor memory device. A sense amplifier circuit includes an N type FET which is a sensing transistor connected between a power supply and a ground via a data line that extends to a memory cell, a resistance element that is connected between a gate of the sensing transistor and the power supply, and a capacitance element that is connected between the gate of the sensing transistor and the ground.

主权项

1. A sense amplifier circuit comprising:
a sensing transistor that is connected between a first power supply and a second power supply through a memory cell connection line that extends to a memory cell; a resistance element that is connected between the first power supply and a control terminal of the sensing transistor; and a capacitance element that is connected between the second power supply and the control terminal of the sensing transistor, wherein a first capacity from the sensing transistor to the second power supply through the capacitance element is equal to a second capacity from the sensing transistor to the second power supply through the memory cell connection line.