发明名称 |
Light-emitting diode structure |
摘要 |
A light-emitting diode structure includes an AuSn or AuIn-containing bonding layer over a substrate, a metal layer disposed over the bonding layer, a p-type doped gallium nitride (p-GaN) layer disposed over the metal layer, a n-type doped gallium nitride (n-GaN) layer approximate the p-GaN layer, a multiple quantum well structure disposed between the n-GaN and p-GaN layers, and a conductive contact disposed on the n-GaN layer. The n-GaN layer includes a rough surface with randomly distributed dips. The nano-sized dips have diameters distributed between about 100 nm and about 600 nm, have a dip density ranging from about 107 grains/cm2 to about 109 grains/cm2, and are spaced from each other with an average spacing S, average diameter D, and a ratio S/D that ranges between about 1.1 and about 1.5. The conductive contact is disposed on some of the nano-sized dips of the rough surface. |
申请公布号 |
US9117968(B2) |
申请公布日期 |
2015.08.25 |
申请号 |
US201313834055 |
申请日期 |
2013.03.15 |
申请人 |
TSMC SOLID STATE LIGHTING LTD. |
发明人 |
Hsia Hsing-Kuo;Chiu Ching-Hua |
分类号 |
H01L33/00;H01L33/20 |
主分类号 |
H01L33/00 |
代理机构 |
Muncy, Geissler, Olds & Lowe, P.C. |
代理人 |
Muncy, Geissler, Olds & Lowe, P.C. |
主权项 |
1. A light-emitting diode (LED) structure, comprising:
a bonding layer disposed over a substrate, wherein the bonding layer contains AuSn or AuIn; a metal layer disposed over the bonding layer; a p-type doped gallium nitride (p-GaN) layer disposed over the metal layer; a n-type doped gallium nitride (n-GaN) layer approximate the p-GaN layer; a multiple quantum well (MQW) structure disposed between the n-GaN layer and the p-GaN layer; and a conductive contact disposed on the n-GaN layer; wherein the n-GaN layer includes a rough surface with randomly distributed nano-sized dips, wherein the nano-sized dips have diameters distributed between about 100 nm and about 600 nm and a dip density ranging from about 107 grains/cm2 to about 109 grains/cm2, wherein the nano-sized dips are spaced from each other with an average spacing S and an average diameter D, wherein a ratio of S/D ranges between about 1.1 and about 1.5, and wherein the conductive contact is disposed on some of the nano-sized dips of the rough surface. |
地址 |
Hsinchu TW |