发明名称 Ion implantation method, carrier, and ion implantation device
摘要 An ion implantation method includes: placing, in an atmosphere, a mask, which is used in conjunction with a tray for accommodating a substrate for a solar cell, at a first position covering a partial area on a surface of the substrate while maintaining the mask aligned relative to the substrate or at a second position distanced from the surface of the substrate; implanting, in a vacuum, ions in a first area on the surface of the substrate while the mask is placed at the first position; and implanting, in a vacuum, ions in a second area on the surface of the substrate while the mask is placed at the second position.
申请公布号 US9117960(B2) 申请公布日期 2015.08.25
申请号 US201313764016 申请日期 2013.02.11
申请人 Sumitomo Heavy Industries, Ltd. 发明人 Soga Tomohiro
分类号 H01L31/18;H01L31/0224;H01J37/317;H01L31/068;H01L21/266;H01L21/265 主分类号 H01L31/18
代理机构 Fishman Stewart Yamaguchi PLLC 代理人 Fishman Stewart Yamaguchi PLLC
主权项 1. A carrier for carrying a substrate for a solar cell into an ion implantation device, comprising: the carrier is configured to carry the substrate from an atmosphere into a process chamber of an ion implantation device; a tray configured to accommodate the substrate; a mask configured to be moved between a first position covering a partial area on a surface of the substrate and a second position distanced from the surface of the substrate, while the mask is being aligned relative to the substrate; and a joining mechanism configured to join the mask and the tray so that the mask is moveable between the first position and the second position.
地址 Tokyo JP