发明名称 |
Ion implantation method, carrier, and ion implantation device |
摘要 |
An ion implantation method includes: placing, in an atmosphere, a mask, which is used in conjunction with a tray for accommodating a substrate for a solar cell, at a first position covering a partial area on a surface of the substrate while maintaining the mask aligned relative to the substrate or at a second position distanced from the surface of the substrate; implanting, in a vacuum, ions in a first area on the surface of the substrate while the mask is placed at the first position; and implanting, in a vacuum, ions in a second area on the surface of the substrate while the mask is placed at the second position. |
申请公布号 |
US9117960(B2) |
申请公布日期 |
2015.08.25 |
申请号 |
US201313764016 |
申请日期 |
2013.02.11 |
申请人 |
Sumitomo Heavy Industries, Ltd. |
发明人 |
Soga Tomohiro |
分类号 |
H01L31/18;H01L31/0224;H01J37/317;H01L31/068;H01L21/266;H01L21/265 |
主分类号 |
H01L31/18 |
代理机构 |
Fishman Stewart Yamaguchi PLLC |
代理人 |
Fishman Stewart Yamaguchi PLLC |
主权项 |
1. A carrier for carrying a substrate for a solar cell into an ion implantation device, comprising:
the carrier is configured to carry the substrate from an atmosphere into a process chamber of an ion implantation device; a tray configured to accommodate the substrate; a mask configured to be moved between a first position covering a partial area on a surface of the substrate and a second position distanced from the surface of the substrate, while the mask is being aligned relative to the substrate; and a joining mechanism configured to join the mask and the tray so that the mask is moveable between the first position and the second position. |
地址 |
Tokyo JP |