发明名称 Photoelectric conversion device comprising photoelectric conversion element
摘要 It is an object to provide a photoelectric conversion device whose power consumption and a mounting area are reduced and yield is improved and further to provide a photoelectric conversion device whose number of manufacturing processes and manufacturing cost are reduced. A photoelectric conversion device includes a photoelectric conversion element for outputting photocurrent corresponding to illuminance, and a resistor changing resistance corresponding to illuminance. In the photoelectric conversion device, one terminal of the photoelectric conversion element and one terminal of the resistor are electrically connected in series; the other terminal of the photoelectric conversion element is connected to a high power supply potential; the other terminal of the resistor is connected to a low power supply potential; and a light intensity adjusting unit is provided on a light reception surface side of the photoelectric conversion element or the resistor to adjust illuminance.
申请公布号 US9117958(B2) 申请公布日期 2015.08.25
申请号 US201113162699 申请日期 2011.06.17
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Shima Yukinori;Hirose Atsushi
分类号 H01L31/00;H01L31/105;H01L31/0216;H01L31/09 主分类号 H01L31/00
代理机构 Robinson Intellectual Property Law Office, P.C. 代理人 Robinson Eric J.;Robinson Intellectual Property Law Office, P.C.
主权项 1. A photoelectric conversion device comprising: a photoelectric conversion element comprising a first p-type semiconductor layer, a first n-type semiconductor layer and a first intrinsic semiconductor layer between the first p-type semiconductor layer and the first n-type semiconductor layer, the photoelectric conversion element configured to output photocurrent corresponding to illuminance of an incident light with which the photoelectric conversion element is irradiated; and a resistor comprising a second p-type semiconductor layer, a second n-type semiconductor layer and a second intrinsic semiconductor layer between the second p-type semiconductor layer and the second n-type semiconductor layer, the resistor configured to change resistance corresponding to illuminance of an incident light with which the resistor is irradiated, wherein one terminal of the photoelectric conversion element and one terminal of the resistor are electrically connected, wherein the other terminal of the photoelectric conversion element is configured to be supplied with a high power supply potential, and wherein the other terminal of the resistor is configured to be supplied with a low power supply potential.
地址 Atsugi-shi, Kanagawa-ken JP
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