| 发明名称 | Semiconductor package with through silicon vias | ||
| 摘要 | A method of forming a light-emitting diode (LED) device is provided. The method includes steps of providing a first substrate, forming an LED structure on the first substrate, forming a porous layer on the first substrate after forming the LED structure, forming a conductive substrate on the LED structure, and separating the LED structure from the first substrate along the porous layer. The substrate has a doped layer. The forming of the porous layer includes a step of converting the dopes layer to the porous layer. | ||
| 申请公布号 | US9117943(B2) | 申请公布日期 | 2015.08.25 |
| 申请号 | US201414466172 | 申请日期 | 2014.08.22 |
| 申请人 | TSMC SOLID STATE LIGHTING LTD. | 发明人 | Chen Ding-Yuan;Yu Chen-Hua;Chiou Wen-Chih |
| 分类号 | H01L33/00;H01L21/78;H01S5/12;H01S5/227 | 主分类号 | H01L33/00 |
| 代理机构 | Muncy, Geissler, Olds & Lowe, P.C. | 代理人 | Muncy, Geissler, Olds & Lowe, P.C. |
| 主权项 | 1. A method of forming a light-emitting diode (LED) device, the method comprising: providing a first substrate, the substrate having a doped layer; forming an LED structure on the first substrate; forming a porous layer on the first substrate after forming the LED structure; forming a conductive substrate on the LED structure; and separating the LED structure from the first substrate along the porous layer. | ||
| 地址 | Hsinchu TW | ||