Cross-point diode arrays and methods of manufacturing cross-point diode arrays

摘要

Methods of forming an array of memory cells and memory cells that have pillars. Individual pillars can have a semiconductor post formed of a bulk semiconductor material and a sacrificial cap on the semiconductor post. Source regions can be between columns of the pillars, and gate lines extend along a column of pillars and are spaced apart from corresponding source regions. Each gate line surrounds a portion of the semiconductor posts along a column of pillars. The sacrificial cap structure can be selectively removed to thereby form self-aligned openings that expose a top portion of corresponding semiconductor posts. Individual drain contacts formed in the self-aligned openings are electrically connected to corresponding semiconductor posts.

主权项

1. A method of forming an array of memory cells, comprising:
forming a plurality of pillars, wherein individual pillars have a semiconductor post formed of a semiconductor material and a sacrificial cap on the semiconductor post; forming source regions between columns of the pillars; forming a plurality of gate lines, wherein individual gate lines extend along a corresponding column of pillars and are spaced apart from corresponding source regions, and wherein each gate line surrounds a portion of the semiconductor posts along a corresponding column of pillars; forming self-aligned openings that expose a top portion of corresponding semiconductor posts by selectively removing the sacrificial caps without forming a mask having a pattern of openings corresponding to the pattern of the self-aligned openings; and forming individual drain contacts in the self-aligned openings that are electrically connected to corresponding semiconductor posts.