Semiconductor device and fabricating method thereof

摘要

A semiconductor device includes a fin region with long and short sides, a first field insulating layer including a top surface lower than that of the fin region and adjacent to a side surface of the short side of the fin region, a second field insulating layer including a top surface lower than that of the fin region and adjacent to a side surface of the long side of the fin region, an etch barrier pattern on the first field insulating layer, a first gate on the fin region and the second field insulating layer to face a top surface of the fin region and side surfaces of the long sides of the fin region. A second gate is on the etch barrier pattern overlapping the first field insulating layer. A source/drain region is between the first gate and the second gate, in contact with the etch barrier pattern.

主权项

1. A semiconductor device, comprising:
a fin region with a long side and a short side; a first field insulating layer including a top surface lower than a top surface of the fin region, the first field insulating layer being adjacent to a side surface of the short side of the fin region; a second field insulating layer including a top surface lower than the top surface of the fin region, the second field insulating layer being adjacent to a side surface of the long side of the fin region; an etch barrier pattern on the first field insulating layer; a first gate on the fin region and the second field insulating layer, the first gate facing the top surface of the fin region and a side surface of the long side of the fin region; a second gate on the etch barrier pattern, the second gate being in an overlapping relationship with the first field insulating layer; and a source/drain region between the first gate and the second gate, the source/drain region being in contact with the etch barrier pattern.