Semiconductor wafer with improved current-voltage linearity

摘要

There is provided a high-performance compound semiconductor epitaxial wafer that has an improved linearity of the voltage-current characteristic, a producing method thereof, and a judging method thereof. Provided is a semiconductor wafer including a compound semiconductor that produces a two-dimensional carrier gas, a carrier supply semiconductor that supplies a carrier to the compound semiconductor, and a mobility lowering semiconductor that is disposed between the compound semiconductor and the carrier supply semiconductor and that has a mobility lowering factor that makes the mobility of the carrier in the mobility lowering semiconductor lower than the mobility of the carrier in the compound semiconductor.

主权项

1. A semiconductor wafer comprising:
a compound semiconductor that produces a two-dimensional carrier gas; a first carrier supply semiconductor that supplies carriers to the compound semiconductor; a first mobility lowering semiconductor disposed between the compound semiconductor and the first carrier supply semiconductor; a second mobility lowering semiconductor disposed on a side of the compound semiconductor opposite the first carrier supply semiconductor; and a second carrier supply semiconductor disposed on a side of the second mobility lowering semiconductor opposite the compound semiconductor; wherein the first mobility lowering semiconductor has a mobility lowering factor that makes the mobility of the carriers in the first mobility lowering semiconductor lower than the mobility of the carriers in the compound semiconductor, and the second mobility lowering semiconductor has a mobility lowering factor that makes the mobility of the carriers in the second mobility lowering semiconductor lower than the mobility of the carriers in the compound semiconductor, the mobility lowering factor of the first mobility lowering semiconductor is an impurity, a crystal defect, a low-mobility material, or a band-barrier material, and the mobility lowering factor of the second mobility lowering semiconductor is an impurity, a crystal defect, a low-mobility material, or a band-barrier material, and the first and second carrier supply semiconductors are N-type AlGaAs, the first and second the mobility lowering semiconductors are N-type GaAs that contains 3.6×1018 [cm−3] or less of a donor impurity, and the compound semiconductor is InGaAs.