Compound semiconductor device and method for manufacturing the same

摘要

A compound semiconductor device includes: an electron transit layer formed of a compound semiconductor; and an electrode formed so as to overlie the electron transit layer with an insulating film interposed between the electron transit layer and the electrode, wherein part of the electron transit layer below the electrode are formed such that a first compound semiconductor having a first polar face and a second compound semiconductor having a second polar face are alternately arranged, and polarization charges in the first polar face have opposite polarity to polarization charges in the second polar face.

主权项

1. A compound semiconductor, comprising:
an electron transit layer formed of a compound semiconductor; an insulating film formed on the electron transit layer; and an electrode formed so as to overlie the electron transit layer, wherein the insulating film is interposed between the electron transit layer and the electrode, wherein part of the electron transit layer below the electrode is formed such that a first compound semiconductor having a first polar face and a second compound semiconductor having a second polar face different than the first polar face, wherein the first and second compound semiconductors are alternately arranged, wherein the insulating film is in direct contact with at least two portions of the first compound semiconductor having the first polar face and at least one portion of the second compound semiconductor having the second polar face, and wherein polarization charges in the first polar face have opposite polarity to polarization charges in the second polar face.