发明名称 |
Conductive line system and process |
摘要 |
A system and method for providing a conductive line is provided. In an embodiment the conductive line is formed by forming two passivation layers, wherein each passivation layer is independently patterned. Once formed, a seed layer is deposited into the two passivation layers, and a conductive material is deposited to fill and overfill the patterns within the two passivation layers. A planarization process such as a chemical mechanical polish may then be utilized in order to remove excess conductive material and form the conductive lines within the two passivation layers. |
申请公布号 |
US9117881(B2) |
申请公布日期 |
2015.08.25 |
申请号 |
US201313929641 |
申请日期 |
2013.06.27 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Huang Yu Yi;Kuo Hung-Jui;Liu Chung-Shi |
分类号 |
H01L23/48;H01L23/52;H01L29/40;H01L21/768;H01L23/31;H01L23/29;H01L23/00;H01L23/532 |
主分类号 |
H01L23/48 |
代理机构 |
Slater & Matsil, L.L.P. |
代理人 |
Slater & Matsil, L.L.P. |
主权项 |
1. A semiconductor device comprising:
a patterned negative tone photosensitive material over a substrate, the patterned negative tone photosensitive material comprising first openings; a patterned positive tone photosensitive material over the patterned negative tone photosensitive material, the patterned positive tone photosensitive material comprising second openings, wherein the patterned negative tone photosensitive material extends from a first sidewall of a first one of the second openings to a second sidewall of the first one of the second openings; a seed layer extending along sidewalls of the second openings; and a conductive material adjacent to the seed layer. |
地址 |
Hsin-Chu TW |