Pattern forming method, chemical amplification resist composition and resist film

摘要

A pattern forming method, including: (i) forming a film from a chemical amplification resist composition; (ii) exposing the film, so as to form an exposed film; and (iii) developing the exposed film by using a developer containing an organic solvent, wherein the chemical amplification resist composition contains: (A) a resin capable of decreasing a solubility of the resin (A) in the developer containing an organic solvent by an action of an acid; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; and (C) a basic, compound or ammonium salt compound whose basicity decreases upon irradiation with an actinic ray or radiation, and a resist composition used for the pattern forming method and a resist film formed from the resist composition are provided.

主权项

1. A pattern forming method, comprising:
(i) forming a film from a chemical amplification resist composition; (ii) pattern-wise exposing the film with far ultraviolet rays or EUV light using a mask or a reticle having a pattern, so as to form an exposed film having low exposure regions and high exposure regions; and (iii) developing the exposed film by using a developer containing an organic solvent, wherein the chemical amplification resist composition contains:
(A) a resin (A) which contains an acid-decomposable group-containing repeating unit and which decreases its solubility in the developer containing an organic solvent by an action of an acid;(B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; and(C) a basic compound or ammonium salt compound whose basicity decreases upon irradiation with an actinic ray or radiation, wherein the organic solvent contained in the developer is at least one kind of an organic solvent selected from the group consisting of a ketone-based solvent, an ester-based solvent, an amide-based solvent or an ether-based solvent, and wherein the development is performed by dissolving the low exposure regions of the exposed film and forming the pattern of said high exposure regions.