METHOD OF MANUFACTURING GATE INSULATION LAYER

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a gate insulation layer satisfying both stability of a TFT (thin film transistor), and a static protection function.SOLUTION: A method of manufacturing a gate insulation layer includes a step of obtaining a gate insulation layer where a silicon nitride layer and a silicon oxide layer are laminated in order, by depositing the silicon nitride layer and the silicon oxide layer in order on a Cu gate, by using chemical vapor deposition. The silicon nitride layer prevents oxidation of the Cu gate by blocking oxygen effectively, and the silicon oxide layer prevents reduction of an active semiconductor layer by blocking hydrogen effectively.