PRODUCTION OF GROUP III NITRIDE SEMICONDUCTOR LAYER

摘要

PROBLEM TO BE SOLVED: To produce a group III nitride semiconductor layer having few crystal defects by a process not existing in the prior art.SOLUTION: There is provided a production of a group III nitride semiconductor layer comprising: a pit forming step S10 of forming a plurality of vertically long pits, which extend in the thickness direction of a ground substrate from a first face of the ground substrate and connected to a dislocation formed on the ground substrate; and a growing step S20 of growing a group III nitride semiconductor on the first face of the ground substrate while leaving at least a portion of a vertical long pit as a cavity. The pit forming step S10 comprises: a protection film forming step of forming a protection film or a SiOfilm or a SiN film on the first face of the ground substrate; and a heat treatment step of forming a vertically long pit by heating the ground substrate and the protection film while supplying TMGa and NH. While heating at the heat treatment step, the flow rate of NHis alternately interchanged between a first flow rate and a second flow rate lower than the first flow rate.