| 摘要 |
PROBLEM TO BE SOLVED: To provide a resist protective film material that has effects of decreasing influences of an environment on a resist film, efficiently blocking OOB (out-of-band) light, as well as decreasing film reduction in a resist pattern or a bridge between patterns, increasing sensitivity of the resist, and suppressing generation of outgas from the resist film, and a pattern forming method.SOLUTION: The resist protective film material is to be used for a method for forming a pattern by lithography, in which after a resist protective film is formed on a photoresist layer formed on a wafer, the photoresist is exposed and developed. The resist protective film material comprises: a polymeric compound having a repeating unit p of styrene having a 1,1,1,3,3,3-hexafluoro-2-propanol group described by general formula (1) below; an ether compound having 6 to 10 carbon atoms; and a hydrocarbon compound having 7 to 12 carbon atoms. In general formula (1), m is 1 or 2, and p satisfies 0<p≤1.0. |
