发明名称 GATE DRIVE CIRCUIT
摘要 PROBLEM TO BE SOLVED: To perform appropriate protection from increase of a gate voltage in the case where a transistor falls into an overcurrent state or the like, in a configuration for driving a gate of the transistor with a constant current.SOLUTION: A constant current circuit 12 outputs a constant current toward a gate of an IGBT 6. An N-channel voltage output transistor 13 is interposed in a forward direction on a route from the constant current circuit 12 to the gate of the IGBT 6. A gate reference voltage generation circuit 11 is configured to generate a gate reference voltage and output it to a gate of the voltage output transistor 13, and switches a voltage value of the gate reference voltage between two stages. A control section 4 operates the constant current circuit 12 and drives the gate of the IGBT 6 with the constant current in the case of turn-on. At a time point of turn-on start, the control section 4 sets the gate reference voltage to a first setting value and in switching timing, the control section 4 then switches the gate reference voltage to a second setting value higher than the first setting value on the condition that it is not an overcurrent state.
申请公布号 JP2015154701(A) 申请公布日期 2015.08.24
申请号 JP20140029605 申请日期 2014.02.19
申请人 DENSO CORP 发明人 SENDA YASUTAKA
分类号 H02M1/08;H02M1/00 主分类号 H02M1/08
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