发明名称 |
ATOMIC LAYER DEPOSITION FILM FORMATION APPARATUS |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide an atomic layer deposition film formation apparatus capable of recovering effectively and reusing a precursor unused for film formation and discharged from a reaction chamber (2), and thereby reducing film formation cost.SOLUTION: A raw material gas exhaust path (26) connected to a reaction chamber (2) is disposed separately from a reaction gas exhaust path (28) and a purge gas exhaust path (30), and precursor collection means (36) is disposed on the raw material gas exhaust path (26).</p> |
申请公布号 |
JP2015151564(A) |
申请公布日期 |
2015.08.24 |
申请号 |
JP20140025160 |
申请日期 |
2014.02.13 |
申请人 |
TOYO SEIKAN GROUP HOLDINGS LTD |
发明人 |
NANGO SHUNYA;OBU YUSUKE;AKUYAMA SHIMPEI;KAWAHARA SHIGERU |
分类号 |
C23C16/44;C23C16/455;H01L21/205 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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