发明名称 ATOMIC LAYER DEPOSITION FILM FORMATION APPARATUS
摘要 <p>PROBLEM TO BE SOLVED: To provide an atomic layer deposition film formation apparatus capable of recovering effectively and reusing a precursor unused for film formation and discharged from a reaction chamber (2), and thereby reducing film formation cost.SOLUTION: A raw material gas exhaust path (26) connected to a reaction chamber (2) is disposed separately from a reaction gas exhaust path (28) and a purge gas exhaust path (30), and precursor collection means (36) is disposed on the raw material gas exhaust path (26).</p>
申请公布号 JP2015151564(A) 申请公布日期 2015.08.24
申请号 JP20140025160 申请日期 2014.02.13
申请人 TOYO SEIKAN GROUP HOLDINGS LTD 发明人 NANGO SHUNYA;OBU YUSUKE;AKUYAMA SHIMPEI;KAWAHARA SHIGERU
分类号 C23C16/44;C23C16/455;H01L21/205 主分类号 C23C16/44
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