| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device in which contact resistance of a metal electrode on an n-type impurity layer is reduced.SOLUTION: The semiconductor device of an embodiment includes: a first electrode; an SiC semiconductor layer of an n-type semiconductor; and a second electrode which is provided on the side opposite to the first electrode of the SiC semiconductor layer, contains at least one element selected from the group consisting of Mg (magnesium), Ca (calcium), Sr (strontium), Ba (barium), Sc (scandium), Y (yttrium), La (lanthanum), and lanthanoids (Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu), and has an SiC metal region of a metal in contact with the SiC semiconductor layer.</p> |
