发明名称 CIRCUIT FOR MEASURING LEAKAGE CURRENT IN SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 <p>A leakage current measuring circuit is disclosed which can measure the leakage current of transistors or functional blocks in a chip of semiconductor integrated circuit. The leakage current measuring circuit comprises: an operating amplifier; a first PMOS transistor; a first switch; a second PMOS transistor; a resistor; and an analog-digital (A/D) converter. The operating amplifier amplifies the difference between the reference voltage and feedback voltage. The first PMOS transistor has a gate to which output voltage of the operating amplifier is applied, a source connected to the first power voltage and a drain connected to a feedback node. The first switch is connected to the feedback node and a test block. The second PMOS transistor has a gate which is connected to the gate of the first PMOS transistor and a source which is connected to the first power voltage. The resistor is connected between a drain of the second PMOS transistor and the grounding. The analog-digital (A/D) converter executes analog-digital (A/D) conversion of the first voltage signals which are applied to both ends of the resistor and generates output data.</p>
申请公布号 KR20150096197(A) 申请公布日期 2015.08.24
申请号 KR20140017351 申请日期 2014.02.14
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 YOON, KUN YONG;PARK, JAE JIN;HYUN, JI HWAN
分类号 G01R31/02;G01R31/28 主分类号 G01R31/02
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