发明名称 |
CIRCUIT FOR MEASURING LEAKAGE CURRENT IN SEMICONDUCTOR INTEGRATED CIRCUIT |
摘要 |
<p>A leakage current measuring circuit is disclosed which can measure the leakage current of transistors or functional blocks in a chip of semiconductor integrated circuit. The leakage current measuring circuit comprises: an operating amplifier; a first PMOS transistor; a first switch; a second PMOS transistor; a resistor; and an analog-digital (A/D) converter. The operating amplifier amplifies the difference between the reference voltage and feedback voltage. The first PMOS transistor has a gate to which output voltage of the operating amplifier is applied, a source connected to the first power voltage and a drain connected to a feedback node. The first switch is connected to the feedback node and a test block. The second PMOS transistor has a gate which is connected to the gate of the first PMOS transistor and a source which is connected to the first power voltage. The resistor is connected between a drain of the second PMOS transistor and the grounding. The analog-digital (A/D) converter executes analog-digital (A/D) conversion of the first voltage signals which are applied to both ends of the resistor and generates output data.</p> |
申请公布号 |
KR20150096197(A) |
申请公布日期 |
2015.08.24 |
申请号 |
KR20140017351 |
申请日期 |
2014.02.14 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YOON, KUN YONG;PARK, JAE JIN;HYUN, JI HWAN |
分类号 |
G01R31/02;G01R31/28 |
主分类号 |
G01R31/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|