| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method of fast and selectively etching a multilayer film including a first film and a second film which are provided on an etching stop layer, have dielectric constants different from each other and are alternately laminated.SOLUTION: This method includes the steps of: (a) supplying a first gas containing hydrogen, hydrogen bromide and nitrogen trifluoride and containing at least any one of hydrocarbon, fluorocarbon and fluorohydrocarbon into a processing container, exciting the first gas and etching the multilayer film from a surface of the multilayer film to a middle position in a direction of lamination; (b) supplying a second gas that does not substantially contain hydrogen bromide, contains hydrogen and nitrogen trifluoride and contains at least any one of hydrocarbon, fluorocarbon and fluorohydrocarbon into the processing container, exciting the second gas and etching the multilayer film from the middle position of the multilayer film to a surface of an etching stop layer.</p> |
