| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide: a nitride semiconductor free-standing substrate capable of preventing cracks from occurring while achieving high resistivity by adding an impurity; a method for manufacturing the same; and a semiconductor device.SOLUTION: A nitride semiconductor free-standing substrate comprises: a first area 104 formed in the lower layer of a nitride semiconductor layer 102 close to a heterogeneous substrate 101; and a second area 105 formed in the upper layer of the nitride semiconductor layer 102 distant from the heterogeneous substrate 101. The diameter is 40 mm or more; the total thickness of the first area 104 and the second area 105 is 200μm or more; an average dislocation density in the in-plane of the surface of the second area 105 is 1×10cmor more and 1×10cmor less; the electrical resistivity of the second area 105 is 0.02Ωcm or more; and the electrical resistivity of the first area 104 is lower than that of the second area 105.</p> |
