摘要 |
<p>PROBLEM TO BE SOLVED: To disclose a semiconductor device and a manufacturing method of the same, which can inhibit stress generated in a semiconductor substrate.SOLUTION: A semiconductor device 100 has a semiconductor substrate 10, a termination trench 30 formed on a surface of the semiconductor substrate 10, a first insulation layer 32b which covers an inner surface of the termination trench 30 and a second insulation layer 34b arranged on a surface of the first insulation layer 32b in the termination trench 30. A direction of stress generated in the first insulation layer 32b is different from a direction of stress generated in the second insulation layer 34b.</p> |