发明名称 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To disclose a semiconductor device and a manufacturing method of the same, which can inhibit stress generated in a semiconductor substrate.SOLUTION: A semiconductor device 100 has a semiconductor substrate 10, a termination trench 30 formed on a surface of the semiconductor substrate 10, a first insulation layer 32b which covers an inner surface of the termination trench 30 and a second insulation layer 34b arranged on a surface of the first insulation layer 32b in the termination trench 30. A direction of stress generated in the first insulation layer 32b is different from a direction of stress generated in the second insulation layer 34b.</p>
申请公布号 JP2015153783(A) 申请公布日期 2015.08.24
申请号 JP20140023863 申请日期 2014.02.10
申请人 TOYOTA MOTOR CORP 发明人 SUZUKI KATSUMI
分类号 H01L29/78;H01L21/316;H01L21/336;H01L29/06;H01L29/12;H01L29/739 主分类号 H01L29/78
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