摘要 |
The present invention relates to a manufacturing method of a slurry composition, and the slurry composition manufactured thereby, which is capable of reducing scratch and residual particles recognized as one of the large factors of reduction in yield due to a large particle and a coagulated particle, regarding application to a semiconductor CMP process, and maintaining a high polishing rate at the same time. In addition, an excellent result can be achieved with respect to application to various patterns required for a process of a ultra-high density integrated semiconductor process, and minimization of a within wafer non-uniformity (WIWNU) and micro-scratch which represents a polishing rate, polishing selectivity, and polishing evenness corresponding to the same. |
申请人 |
K.C.TECH CO., LTD. |
发明人 |
KWON, JANG KUK;JEON, CHAN UN;JUNG, KI HWA;KIM, JUNG YOON;CHOI, NAK HYUN;LEE, SEONG PYO;CHOI, BO HYEOK |