| 摘要 |
PROBLEM TO BE SOLVED: To provide a pattern forming method by which a shrinkage amount can be controlled each in a dense pattern and in a coarse pattern on the same substrate, and a semiconductor device.SOLUTION: The pattern forming method in one embodiment comprises: forming a resist film on a material to be treated; processing the resist film into a resist pattern; applying a crosslinking film or a coating material that protects the resist film on the resist film; applying a self-organizing material on the resist film coated with the crosslinking film; heat-treating the self-organizing material to induce phase separation; and removing a part of the phase-separated self-organizing material. |
