| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor storage device capable of suppressing an increase in circuit area and collectively erasing data in a short period of time.SOLUTION: A semiconductor storage device includes: a memory cell array that includes memory cells each of which has, on a second conductivity type well, a ferroelectric capacitor and a first conductivity type transistor connected to one electrode of the ferroelectric capacitor formed; and a control circuit that controls a potential applied to the second conductivity type well. The control circuit applies, when erasing data in the memory cell, a fixed potential to the other electrode of the ferroelectric capacitor and applies to the second conductivity type well a potential for causing a forward voltage to a junction between the first conductivity type transistor and second conductivity type well; and in a normal operation, applies to the second conductivity type well a potential not causing a forward voltage to the junction between the first conductivity type transistor and second conductivity type well.</p> |
