| 摘要 |
PROBLEM TO BE SOLVED: To achieve a semiconductor light emitting element having an n-type nitride semiconductor layer which can inhibit the occurrence of cracks to a further degree than in the past even when a film thickness is increased while increasing bandgap energy; and achieve a manufacturing method of the semiconductor light emitting element.SOLUTION: A semiconductor light emitting element manufacturing method comprises: a process (a) of forming a GaN layer on a growth substrate; a process (b) of forming a multilayer film including a first layer of an In-containing nitride semiconductor in an upper layer of the GaN layer and a second layer composed of a nitride semiconductor; a process (c) of forming on the multilayer film, a protection layer composed of a nitride semiconductor; a process (d) of an n-type nitride semiconductor layer on the protection layer at a growth temperature higher than that in the process (b) and the process (c); a process (e) of forming an active layer and a p-type nitride semiconductor layer on the n-type nitride semiconductor layer; and a process (f) of detaching a growth substrate by irradiating light having a wavelength of energy smaller than bandgap energy of the nitride semiconductor which composes the multilayer film. In the process (d), voids are formed inside by thermal decomposition of the multilayer film. |
