发明名称 VOLTAGE DETECTION CIRCUIT
摘要 <p>PROBLEM TO BE SOLVED: To provide a voltage detection circuit having a small occupancy area capable of reducing a product in size and manufacturing costs.SOLUTION: A voltage detection part 1 includes: an upper side n type depression MOSFET (Q1); a lower side n type depression MOSFET (Q2) serially connected to the Q1; and a high potential side 2 of a power source 20 connected to a drain 11 of the Q1. A source 12 of the Q1 and a drain 13 of the Q2 are connected via a connection point A, and a source 14 of the Q2 is connected to a ground 3. Also, gates 15 and 16 of the Q1 and Q2 are respectively connected to sources 12 and 14 of the Q1 and Q2. The connection point A of the Q1 and Q2 is connected to the input of an inverter 4. The voltage detection part 1 includes two depression MOSFET, and the connection point A is directly connected to the inverter so that the number of components can be reduced, and that the occupancy area of a voltage detection circuit can be made small.</p>
申请公布号 JP2015152570(A) 申请公布日期 2015.08.24
申请号 JP20140029680 申请日期 2014.02.19
申请人 FUJI ELECTRIC CO LTD 发明人 OE TAKASATO
分类号 G01R19/165;H01L21/822;H01L27/04;H03K17/22 主分类号 G01R19/165
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