| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device which corresponds to high temperature and has high reliability.SOLUTION: A semiconductor device comprises: an insulating substrate 4; and semiconductor elements (IGBT2, SBD3) bonded to the insulating substrate 4 via sintered bonding parts 5 by sintering reaction. Each sintered bonding part 5 is formed on an inner region at a distance from an outer periphery (lateral face S2) of the semiconductor element. Or in a manufacturing method, a bonding materia, 5P is arranged so as to fall within an inner range at a distance from the outer periphery of the semiconductor. |
