| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which includes an etching method for inhibiting generation of a water mark without deteriorating device characteristics; and provide a manufacturing apparatus of the semiconductor device.SOLUTION: A semiconductor device manufacturing method comprises: a first process S11 of etching a surface of a wafer in which at least the surface is composed of a silicon-based material by HF (HydroFluoric acid); a first rinse process S12 of rinsing the wafer subjected to the etching process; a second rinse process S13 of rinsing the wafer subjected to the first rinse process S12; and a process S14 of hydrating the wafer. The first rinse process S12 includes a control process of adding an additive containing hydrogen, silicon and fluorine, such as hexafluorosilicic acid to a rinse agent. |
