SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method capable of reducing a heat treatment time of a semiconductor substrate to a further degree.SOLUTION: A semiconductor device manufacturing method comprises: a semiconductor substrate preparation process (S10); a preheating process (S20) of placing the semiconductor substrate on a placement surface of a first heated member and heating the semiconductor substrate after forming a temperature distribution in a thickness direction of the semiconductor substrate; a chucking process (S30) of placing and fixing the semiconductor substrate heated in the preheating process on an electrostatic chuck; an actual heating process (S40) of heating the semiconductor substrate fixed on the electrostatic chuck; and an ion implantation process (S50) of implanting ion into the semiconductor substrate heated in the actual heating process. In the preheating process (S20), the temperature distribution is formed in a manner such that the heated semiconductor substrate has a shape where a central region of the semiconductor substrate separates from the placement surface, or the heated semiconductor substrate has a shape that follows the placement surface.