发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of obtaining a desired fine pattern with a smaller number of steps than an LELE process.SOLUTION: There is provided a method for manufacturing a semiconductor device which comprises: a coating step of coating a photosensitive agent on a workpiece; a first exposure step of exposing the photosensitive agent using a first exposure mask; a first development step of performing positive development using a first developer in the photosensitive agent after the first exposure step; a second exposure step of exposing the photosensitive agent using a second exposure mask after the first development step; and a second development step of performing negative development using a second developer in the photosensitive agent after the second exposure step.
申请公布号 JP2015152730(A) 申请公布日期 2015.08.24
申请号 JP20140025637 申请日期 2014.02.13
申请人 TOKYO ELECTRON LTD 发明人 YAEGASHI HIDETAMI
分类号 G03F7/40;H01L21/027 主分类号 G03F7/40
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