| 摘要 |
PROBLEM TO BE SOLVED: To provide an organic film etching method by which a pattern of a hard mask layer can be accurately transferred and an etching rate is increased.SOLUTION: Etching is performed on an organic film 2 of which the surface is selectively protected by a hard mask layer 2. In such a case, a partial etching step and a deposition step are iteratively implemented. In the partial etching step, etching is performed on the organic film 1 only in a portion of thickness of the organic film 1 by using a mixture gas of a gas for performing anisotropic etching on a silicon-oxide film, and a gas for performing isotropic etching on the organic film 1 without performing etching on the silicon-oxide film. In the deposition step, a protective film 3 formed from the silicon-oxide film is grown on a side face 12 and a bottom face 11 of a recessed portion 10 that is formed in the partial etching step, and in the hard mask layer 2. |
