| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon single crystal production apparatus capable of pulling up a single crystal in a crystal diameter and a crystal pulling-up speed that are close to target values.SOLUTION: A silicon single crystal production apparatus by the Czochralski method (CZ method) equipped with a chamber having a heater to heat a raw material therein and means for cooling the chamber with a cooling medium, includes means for measuring an inlet temperature, an outlet temperature, and a flow rate of the cooling medium to cool the chamber flowing through a passage in the chamber, calculation means for calculating a calorie removed from the chamber on the basis of the measured values of the inlet temperature, outlet temperature and flow rate, and heater electric power control means for controlling heater electric power on the basis of the calculated removed calorie. |
