发明名称 |
REVERSING GATE VOLTAGE REFERENCE DEVICE AND USING METHOD OF THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a voltage reference device whose accuracy does not fall due to an environmental temperature.SOLUTION: A voltage reference device includes: a reversing gate transistor M1 that is disposed to receive a first current I1; a first transistor M2 that is disposed to receive a second current I2, has a first leakage current, and is connected to the reversing gate transistor M1 in a Vgs subtractive arrangement; an output node that is disposed to output a reference voltage, and includes an output node VREF connected to the first transistor M2; and a second transistor M3 that is connected to the output node, and has a second leakage current substantially equal to the first leakage current. |
申请公布号 |
JP2015153418(A) |
申请公布日期 |
2015.08.24 |
申请号 |
JP20140119682 |
申请日期 |
2014.06.10 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTUARING CO LTD |
发明人 |
MOHAMMAD AL-SHYOUKH;KALNITSKY ALEXANDER |
分类号 |
G05F3/26;H01L21/822;H01L21/8234;H01L27/04;H01L27/06;H01L27/088 |
主分类号 |
G05F3/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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