发明名称 REVERSING GATE VOLTAGE REFERENCE DEVICE AND USING METHOD OF THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a voltage reference device whose accuracy does not fall due to an environmental temperature.SOLUTION: A voltage reference device includes: a reversing gate transistor M1 that is disposed to receive a first current I1; a first transistor M2 that is disposed to receive a second current I2, has a first leakage current, and is connected to the reversing gate transistor M1 in a Vgs subtractive arrangement; an output node that is disposed to output a reference voltage, and includes an output node VREF connected to the first transistor M2; and a second transistor M3 that is connected to the output node, and has a second leakage current substantially equal to the first leakage current.
申请公布号 JP2015153418(A) 申请公布日期 2015.08.24
申请号 JP20140119682 申请日期 2014.06.10
申请人 TAIWAN SEMICONDUCTOR MANUFACTUARING CO LTD 发明人 MOHAMMAD AL-SHYOUKH;KALNITSKY ALEXANDER
分类号 G05F3/26;H01L21/822;H01L21/8234;H01L27/04;H01L27/06;H01L27/088 主分类号 G05F3/26
代理机构 代理人
主权项
地址