SEMICONDUCTOR INTEGRATED CIRCUIT FAILURE DIAGNOSIS METHOD

摘要

PROBLEM TO BE SOLVED: To predict in advance a failure due to the breakdown of a gate oxide film of a semiconductor integrated circuit.SOLUTION: A failure diagnosis method according to an embodiment includes: a preparation data acquisition test step S10 for measuring a time relation of standby current consumption to a power supply voltage in a rest state of each of a plurality of semiconductor integrated circuits; a relation acquisition step S31 for collecting results of the preparation data acquisition test step and field data and storing them as a database; a target measurement step S41 for measuring a standby current consumption of a target semiconductor integrated circuit; and a failure prediction step S43 for predicting a failure of the target semiconductor integrated circuit on the basis of the data collected in the database. The preparation data acquisition test step S10 includes a voltage application step, a current measurement step, and a data acquisition step.