发明名称 ELECTROOPTICAL LIGHT MODULATOR
摘要 PROBLEM TO BE SOLVED: To provide an electrooptical light modulator capable of operating at a lower voltage than before.SOLUTION: An electrooptical crystal according to the present invention is a KTN single crystal, which is 4 mm in length and 2 mm in thickness. The thickness direction is a direction <100> of the crystal. As its phase transition temperature Tc in an electric field zero is 35°C, this KTN single crystal is used by retaining it at 40.5°C with a temperature adjuster or the like, which is a temperature little higher than that and near the critical end point. The dielectric constant in an electric field zero at this temperature is 15,000. The electrode, for both, is formed by evaporating Pt and Au in order. The KTN single crystal is temperature-controlled at 40.5°C, and further, while a 620 V bias application voltage, which is also near the critical end point, is being applied between the two electrodes, a laser beam in wavelength of 633 nm is injected in it. It was confirmed that, when an AC control voltage is superposed on the bias voltage, the intensity of light emitted from an analyzer is modulated.
申请公布号 JP2015152860(A) 申请公布日期 2015.08.24
申请号 JP20140028735 申请日期 2014.02.18
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 IMAI KANEYUKI;INAGAKI TAKAHIRO;MIYATSU JUN;KOBAYASHI JUNYA
分类号 G02F1/03 主分类号 G02F1/03
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