NITRIDE SEMICONDUCTOR DEVICE MANUFACTURING METHOD, NITRIDE SEMICONDUCTOR DEVICE, DIODE AND FIELD EFFECT TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor device capable of inhibiting a decrease in withstand voltage and achieving improvement of manufacturing yield.SOLUTION: In a manufacturing method of a nitride semiconductor device which comprises: a semiconductor laminate including a substrate, a first semiconductor layer on the substrate, a second semiconductor layer having a band gap wider than that of the first semiconductor layer on average, and a third semiconductor layer which is selectively formed in an upper layer of the second semiconductor layer and has a band gap narrower than that of the second semiconductor layer on average; a first electrode provided on at least on some layers of semiconductor layers which compose the semiconductor laminate; and a second electrode provided on at least on some layers of the semiconductor layers which compose the semiconductor laminate, an etching condition of forming the third semiconductor layer into a predetermined shape by etching is set at a condition capable of etching the third semiconductor layer to have a film thickness obtained by adding a value of not less than 50 nm and not more than 300 nm to a design film thickness of the third semiconductor layer.