SEMICONDUCTOR BONDING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor bonding method which prevents the occurrence of voids and non-uniform film thickness of a bonding part, which are caused by a volatile gas or volumetric shrinkage at the time of sintering a metal nano bonding material.SOLUTION: A semiconductor bonding method includes: a first process of coating a first conductive bonding material 1 containing metal nanoparticles, an organic dispersing agent and an organic solvent on a bonding region of a support medium for fixing a semiconductor chip 5 in the size larger than the size of a bonding part of the semiconductor chip 5 and subsequently heating and temporarily hardening the first conductive bonding material 1; a second process of coating a second conductive bonding material 2 containing metal nanoparticles, an organic dispersing agent and an organic solvent on a top face of the first conductive bonding material 1; a third process of die bonding the semiconductor chip 5 in a manner such that a whole area of the bonding part contacts the top face of the first conductive bonding material 1 and at least a part of a circumference of the bonding part contacts the second conductive bonding material 2; and a fourth process of heating the first conductive bonding material 1 and the second conductive bonding material 2 at the same time and hardening the first conductive bonding material 1 and the second conductive bonding material 2.