| 摘要 |
<p>Provided is a quantum dot light-emitting device. The quantum dot light-emitting device comprises: an anode; a pore injecting layer formed on the anode, and including poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate) (PEDOT-PSS) and an additional conductive material; a pore transporting layer formed on the pore injecting layer; a light-emitting layer formed on the pore transporting layer, and including a quantum dot; an electronic injecting layer formed on the light-emitting layer; and a cathode formed on the electronic injecting layer. In various embodiments of the present invention, a pore injecting layer including an additional conductive material is applied to a quantum dot light-emitting device, thereby improving a pore moving degree of the pore injecting layer and enhancing a light-emitting efficiency of the quantum dot light-emitting device.</p> |
