发明名称 |
GALLIUM NITRIDE TO SILICON DIRECT WAFER BONDING |
摘要 |
<p>A direct wafer bonding process for joining GaN and silicon substrates involves pre- treating each of the wafers in an ammonia plasma in order to render the respective contact surfaces ammophilic. The GaN substrate and the silicon substrate may each comprise single crystal wafers. The resulting hybrid semiconductor structure can be used to form high quality, low cost LEDs.</p> |
申请公布号 |
IN10143DEN2014(A) |
申请公布日期 |
2015.08.21 |
申请号 |
IN2014DE10143 |
申请日期 |
2014.11.28 |
申请人 |
CORNING INCORPORATED;USENKO, ALEXANDER |
发明人 |
USENKO ,ALEXANDER |
分类号 |
H01L33/00;H01L21/02;H01L33/32 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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