Provided are an under bump metallization structure and a forming method thereof. The under bump metallization has a rewire via hole in a round shape or a polygonal shape having an angle between adjacent edges greater than 90°. Therefore, a step coverage of a metal layer formed after is improved.
申请公布号
KR20150095547(A)
申请公布日期
2015.08.21
申请号
KR20140150438
申请日期
2014.10.31
申请人
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
发明人
LEE CHIH FEI;CHANG FU CHENG;JENG CHI CHERNG;CHEN HSIN CHI;HWANG YUAN KO
