使用硼掺杂的矽锗层的层转移技术,申请号TW100103869-传众专利搜索

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发明名称	使用硼掺杂的矽锗层的层转移技术
摘要
申请公布号	TWI497742	申请公布日期	2015.08.21
申请号	TW100103869	申请日期	2011.02.01
申请人	万国商业机器公司	发明人	贝戴尔　史帝芬;佛杰　基斯;印斯　丹尼尔;金知焕;沙达那　蒂凡卓;凡奇康提　詹姆斯
分类号	H01L31/18;H01L21/22	主分类号	H01L31/18
代理机构		代理人	李宗德台北市大安区敦化南路2段218号5楼Ａ区
主权项	一种使用硼掺杂的矽锗(SiGe)层之层转移方法，该方法包含：在一块状矽基板上形成一硼掺杂的矽锗(SiGe)层；在该硼掺杂的矽锗层之上形成一上矽(Si)层；将该硼掺杂的矽锗层氢化；将该上矽层与一替代基板接合；以及在该硼掺杂的矽锗层与该块状矽基板之间的一介面上蔓延一裂缝。
地址	美国

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