发明名称 DEVICE
摘要 PROBLEM TO BE SOLVED: To eliminate electric discharge due to static electricity generated by peeling when an element formation layer including a semiconductor element is peeled from a substrate used for manufacturing the semiconductor element.SOLUTION: A substrate 10 over which an element formation layer 11 and a peeling layer 12 are formed and a film 30 are made to go through a gap between a pressurization roller 33 and a pressurization roller 34. The film 30 is attached to the element formation layer 11 between the pressurization roller 33 and the pressurization roller 34. The film 30 is bent along a curved surface of the pressurization roller 33 on a side of the pressurization rollers 33, 34, where the film 30 is collected, and accordingly, peeling is generated between the element formation layer 11 and the peeling layer 12 and the element formation layer 11 is transferred to the film 30. A liquid 15 such as pure water is sequentially supplied by a nozzle 35 to a gap between the element formation layer 11 and the peeling layer 12, which is generated by peeling, so that electric charges generated on surfaces of the element formation layer 11 and the peeling layer 12 are diffused by the liquid 15.
申请公布号 JP2015149502(A) 申请公布日期 2015.08.20
申请号 JP20150083039 申请日期 2015.04.15
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 EGUCHI SHINGO;MONMA YOHEI;TANI ATSUHIRO;HIROSUE MISAKO;HASHIMOTO KENICHI;HOSAKA HIROYASU
分类号 H01L21/02;H01L27/12 主分类号 H01L21/02
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