| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a high opening ratio or a manufacturing method of the semiconductor device, and to provide a semiconductor device achieving lower power consumption or a manufacturing method of the semiconductor device.SOLUTION: A semiconductor device includes: an oxide semiconductor layer 103a provided on a substrate 100 having an insulative surface; a gate insulation film 104 covering the oxide semiconductor layer; gate wiring including a gate electrode which is provided on the gate insulation film and formed by laminating a first conductive layer 109a and a second conductive layer 111a in the written order; an insulation film covering the oxide semiconductor layer and the gate wiring including the gate electrode; and source wiring which is provided on the insulation film, electrically connected with the oxide semiconductor layer, and has a source electrode formed by laminating a third conductive layer 117a and a fourth conductive layer 119a in the written order. The gate electrode is formed by the first conductive layer and the gate wiring is formed by the first conductive layer and the second conductive layer. The source electrode is formed by the third conductive layer and the source wiring is formed by the third conductive layer and the fourth conductive layer. |
