DIODE

摘要

PROBLEM TO BE SOLVED: To provide a diode having excellent switching characteristics.SOLUTION: A diode 1 includes: a silicon carbide substrate 11; a stop layer 12; a drift layer 13; a guard ring 14; a Schottky electrode 15; an ohmic electrode 16; and a surface protective film 17. At a measurement temperature of 25°C, a product R×Q of forward direction on-resistance R of the diode 1 and a response charge Q of the diode 1 satisfies a relationship of R×Q≤0.25×V. A reverse breakdown voltage Vis defined as a reverse voltage of the diode 1 that generates current density Jr that is 10times current density Jf of a forward current. The response charge Q is obtained from a test result by a di/dt method.