发明名称 CURRENT GENERATION CIRCUITS AND SEMICONDUCTOR DEVICES INCLUDING THE SAME
摘要 Semiconductor devices are provided. The semiconductor device may include a current generation circuit and an internal circuit. The current generation circuit may include a first drive element and a second drive element which are connected in series. The current generation circuit may generate a reference voltage signal whose voltage level is set by a reference current which is identical or substantially identical to a current flowing through the first and second drive elements. The internal circuit may utilize an output current controlled according to the reference current as an operation current thereof.
申请公布号 US2015236579(A1) 申请公布日期 2015.08.20
申请号 US201414446039 申请日期 2014.07.29
申请人 SK hynix Inc. 发明人 CHOI Hae Rang
分类号 H02M1/08;H02M3/156 主分类号 H02M1/08
代理机构 代理人
主权项 1. A current generation circuit comprising: a reference voltage generator including a first drive element and a second drive element which are connected in series, and the reference voltage generator is suitable for generating a reference voltage signal; and an output current generator suitable for generating an output current, wherein a voltage level of the reference voltage signal is set by a reference current, the reference current being substantially identical to a current flowing through the first and second drive elements, wherein a current level of the output current is set in response to the reference voltage signal, and wherein a threshold voltage of the first drive element is different from a threshold voltage of the second drive element.
地址 Icheon-si Gyeonggi-do KR